Show simple item record

dc.contributor.authorSalas Villaseñor, Ana L.
dc.contributor.authorMejia, Israel I.
dc.contributor.authorSotelo-Lerma, Mérida
dc.contributor.authorGuo, Zaibing
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorQuevedo-López, Manuel Angel Quevedo
dc.date.accessioned2015-08-03T11:55:02Z
dc.date.available2015-08-03T11:55:02Z
dc.date.issued2014-06-06
dc.identifier.issn02681242
dc.identifier.doi10.1088/0268-1242/29/8/085001
dc.identifier.urihttp://hdl.handle.net/10754/563584
dc.description.abstractThin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.
dc.description.sponsorshipAuthors would like to thank CONACyT project 158281, The AFOSR project FA9550-10-1-0183, and COSMOS for partially supporting this work.
dc.publisherIOP Publishing
dc.subjectelectrical stability
dc.subjectsolution-based
dc.subjectthin film transistors
dc.titleImproved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments
dc.typeArticle
dc.contributor.departmentCore Labs
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentThin Films & Characterization
dc.identifier.journalSemiconductor Science and Technology
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States
dc.contributor.institutionDepartment of Polymer and Materials Science, University of Sonora, Hermosillo, Mexico
kaust.personGuo, Zaibing
kaust.personAlshareef, Husam N.
dc.date.published-online2014-06-06
dc.date.published-print2014-06-01


This item appears in the following Collection(s)

Show simple item record