Show simple item record

dc.contributor.authorQaisi, Ramy M.
dc.contributor.authorSmith, Casey
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-08-03T11:54:15Z
dc.date.available2015-08-03T11:54:15Z
dc.date.issued2014-05-15
dc.identifier.issn18626254
dc.identifier.doi10.1002/pssr.201409100
dc.identifier.urihttp://hdl.handle.net/10754/563550
dc.description.abstractWe report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.publisherWiley
dc.subjectChemical vapor deposition
dc.subjectGraphene
dc.subjectTransistors
dc.titleAtmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalphysica status solidi (RRL) - Rapid Research Letters
kaust.personQaisi, Ramy M.
kaust.personSmith, Casey
kaust.personHussain, Muhammad Mustafa
dc.date.published-online2014-05-15
dc.date.published-print2014-07


This item appears in the following Collection(s)

Show simple item record