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dc.contributor.authorQaisi, Ramy M.
dc.contributor.authorSmith, Casey
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-08-03T11:54:15Z
dc.date.available2015-08-03T11:54:15Z
dc.date.issued2014-05-15
dc.identifier.issn18626254
dc.identifier.doi10.1002/pssr.201409100
dc.identifier.urihttp://hdl.handle.net/10754/563550
dc.description.abstractWe report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.publisherWiley-Blackwell
dc.subjectChemical vapor deposition
dc.subjectGraphene
dc.subjectTransistors
dc.titleAtmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature
dc.typeArticle
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalphysica status solidi (RRL) - Rapid Research Letters
kaust.personQaisi, Ramy M.
kaust.personSmith, Casey
kaust.personHussain, Muhammad Mustafa


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