Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature
Type
ArticleKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Integrated Nanotechnology Lab
Physical Science and Engineering (PSE) Division
Date
2014-05-15Online Publication Date
2014-05-15Print Publication Date
2014-07Permanent link to this record
http://hdl.handle.net/10754/563550
Metadata
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We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Citation
Qaisi, R. M., Smith, C. E., & Hussain, M. M. (2014). Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature. Physica Status Solidi (RRL) - Rapid Research Letters, 8(7), 621–624. doi:10.1002/pssr.201409100Publisher
Wileyae974a485f413a2113503eed53cd6c53
10.1002/pssr.201409100