Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials

Abstract
Solution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices to display high open-circuit voltages (>0.85 V) and generate significant charge carriers through hole transfer in addition to the electron-transfer pathway, which is common in fullerene-based devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Citation
Douglas, J. D., Chen, M. S., Niskala, J. R., Lee, O. P., Yiu, A. T., Young, E. P., & Fréchet, J. M. J. (2014). Solution-Processed, Molecular Photovoltaics that Exploit Hole Transfer from Non-Fullerene, n-Type Materials. Advanced Materials, 26(25), 4313–4319. doi:10.1002/adma.201305444

Acknowledgements
This work was supported in part by the Director, Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division, of the U.S. Department of Energy under contract No. DE-AC02-05CH11231, and the Frechet "various donors" gift fund for the support of research in new materials. M.S.C. thanks the Camille and Henry Dreyfus Postdoctoral Program in Environmental Chemistry for a fellowship.

Publisher
Wiley

Journal
Advanced Materials

DOI
10.1002/adma.201305444

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