Solution-processed, molecular photovoltaics that exploit hole transfer from non-fullerene, n-type materials
AuthorsDouglas, Jessica D.
Chen, Mark S.
Niskala, Jeremy R.
Lee, Olivia P.
Yiu, Alan T.
Young, Eric P.
KAUST DepartmentChemical Science Program
Office of the VP
Physical Science and Engineering (PSE) Division
Online Publication Date2014-05-12
Print Publication Date2014-07
Permanent link to this recordhttp://hdl.handle.net/10754/563543
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AbstractSolution-processed organic photovoltaic devices containing p-type and non-fullerene n-type small molecules obtain power conversion efficiencies as high as 2.4%. The optoelectronic properties of the n-type material BT(TTI-n12)2 allow these devices to display high open-circuit voltages (>0.85 V) and generate significant charge carriers through hole transfer in addition to the electron-transfer pathway, which is common in fullerene-based devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
CitationDouglas, J. D., Chen, M. S., Niskala, J. R., Lee, O. P., Yiu, A. T., Young, E. P., & Fréchet, J. M. J. (2014). Solution-Processed, Molecular Photovoltaics that Exploit Hole Transfer from Non-Fullerene, n-Type Materials. Advanced Materials, 26(25), 4313–4319. doi:10.1002/adma.201305444
SponsorsThis work was supported in part by the Director, Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division, of the U.S. Department of Energy under contract No. DE-AC02-05CH11231, and the Frechet "various donors" gift fund for the support of research in new materials. M.S.C. thanks the Camille and Henry Dreyfus Postdoctoral Program in Environmental Chemistry for a fellowship.