Photovoltaic heterojunctions of fullerenes with MoS2 and WS2 monolayers
Type
ArticleKAUST Department
Computational Physics and Materials Science (CPMS)Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2014-04-04Online Publication Date
2014-04-04Print Publication Date
2014-04-17Permanent link to this record
http://hdl.handle.net/10754/563503
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First-principles calculations are performed to explore the geometry, bonding, and electronic structures of six ultrathin photovoltaic heterostructures consisting of pristine and B- or N-doped fullerenes and MoS2 or WS2 monolayers. The fullerenes prefer to be attached with a hexagon parallel to the monolayer, where B and N favor proximity to the monolayer. The main electronic properties of the subsystems stay intact, suggesting weak interfacial interaction. Both the C60/MoS 2 and C60/WS2 systems show type-II band alignments. However, the built-in potential in the former case is too small to effectively drive electron-hole separation across the interface, whereas the latter system is predicted to show good photovoltaic performance. Unfortunately, B and N doping destroys the type-II band alignment on MoS2 and preserves it only in one spin channel on WS2, which is unsuitable for excitonic solar cells. Our results suggest that the C60/WS 2 system is highly promising for excitonic solar cells. © 2014 American Chemical Society.Citation
Gan, L.-Y., Zhang, Q., Cheng, Y., & Schwingenschlögl, U. (2014). Photovoltaic Heterojunctions of Fullerenes with MoS2 and WS2 Monolayers. The Journal of Physical Chemistry Letters, 5(8), 1445–1449. doi:10.1021/jz500344sSponsors
This work was supported by a KAUST CRG grant, and computational resources were provided by KAUST HPC.Publisher
American Chemical Society (ACS)PubMed ID
26269992ae974a485f413a2113503eed53cd6c53
10.1021/jz500344s
Scopus Count
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