Type
ArticleKAUST Department
Computational Physics and Materials Science (CPMS)Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2014-04-22Online Publication Date
2014-04-22Print Publication Date
2014-04-01Permanent link to this record
http://hdl.handle.net/10754/563482
Metadata
Show full item recordAbstract
Defects in CaHfO3 are investigated by ab initio calculations based on density functional theory. Pristine and anion-deficient CaHfO 3 are found to be insulating, whereas cation-deficient CaHfO 3 is hole-doped. The formation energies of neutral and charged cation and anion vacancies are evaluated to determine the stability in different chemical environments. Moreover, the energies of the partial and full Schottky defect reactions are computed. We show that clustering of anion vacancies in the HfO layers is energetically favorable for sufficiently high defect concentrations and results in metallicity. © 2014 EPLA.Citation
Alay-e-Abbas, S. M., Nazir, S., Mun Wong, K., Shaukat, A., & Schwingenschlögl, U. (2014). Chemical stability and defect formation in CaHfO 3. EPL (Europhysics Letters), 106(2), 27003. doi:10.1209/0295-5075/106/27003Publisher
IOP PublishingJournal
EPL (Europhysics Letters)ae974a485f413a2113503eed53cd6c53
10.1209/0295-5075/106/27003