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dc.contributor.authorZhou, Hang
dc.contributor.authorDeng, Rui
dc.contributor.authorLi, Yongfeng
dc.contributor.authorYao, Bin
dc.contributor.authorDing, Zhanhui
dc.contributor.authorWang, Qingxiao
dc.contributor.authorHan, Yu
dc.contributor.authorWu, Tao
dc.contributor.authorLiu, Lei
dc.date.accessioned2015-08-03T11:52:02Z
dc.date.available2015-08-03T11:52:02Z
dc.date.issued2014-03-27
dc.identifier.issn19327447
dc.identifier.doi10.1021/jp411128m
dc.identifier.urihttp://hdl.handle.net/10754/563459
dc.description.abstractWe report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China under Grant Nos. 61205038 and 11274135, Natural Science Foundation of Jilin province under Grant No. 201115013, and Ph.D. Programs Foundation of Ministry of Education of China under Grant No. 20120061120011. The work is supported by the Scientific and Technological Research Project of the "12th Five-Year Plan" of Jilin Provincial Education Department under Grant No. 2013189. This work was supported by High Performance Computing Center of Jilin University, China.
dc.publisherAmerican Chemical Society (ACS)
dc.titleWavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentChemical Science Program
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Center
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentCore Labs
dc.contributor.departmentNanostructured Functional Materials (NFM) laboratory
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energy
dc.identifier.journalThe Journal of Physical Chemistry C
dc.contributor.institutionSchool of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
dc.contributor.institutionKey Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, China
dc.contributor.institutionState Key Lab of Superhard Material, College of Physics, Jilin University, Changchun 130012, China
dc.contributor.institutionState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, China
kaust.personWang, Qingxiao
kaust.personHan, Yu
kaust.personWu, Tao


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