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    Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

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    Type
    Article
    Authors
    Zhou, Hang
    Deng, Rui
    Li, Yongfeng
    Yao, Bin
    Ding, Zhanhui
    Wang, Qingxiao
    Han, Yu cc
    Wu, Tao cc
    Liu, Lei
    KAUST Department
    Advanced Membranes and Porous Materials Research Center
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Chemical Science Program
    Core Labs
    Imaging and Characterization Core Lab
    KAUST Solar Center (KSC)
    Laboratory of Nano Oxides for Sustainable Energy
    Material Science and Engineering Program
    Nanostructured Functional Materials (NFM) laboratory
    Physical Science and Engineering (PSE) Division
    Date
    2014-03-14
    Online Publication Date
    2014-03-14
    Print Publication Date
    2014-03-27
    Permanent link to this record
    http://hdl.handle.net/10754/563459
    
    Metadata
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    Abstract
    We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.
    Citation
    Zhou, H., Deng, R., Li, Y.-F., Yao, B., Ding, Z.-H., Wang, Q.-X., … Liu, L. (2014). Wavelength-Tuned Light Emission via Modifying the Band Edge Symmetry: Doped SnO2 as an Example. The Journal of Physical Chemistry C, 118(12), 6365–6371. doi:10.1021/jp411128m
    Sponsors
    This work was supported by the National Natural Science Foundation of China under Grant Nos. 61205038 and 11274135, Natural Science Foundation of Jilin province under Grant No. 201115013, and Ph.D. Programs Foundation of Ministry of Education of China under Grant No. 20120061120011. The work is supported by the Scientific and Technological Research Project of the "12th Five-Year Plan" of Jilin Provincial Education Department under Grant No. 2013189. This work was supported by High Performance Computing Center of Jilin University, China.
    Publisher
    American Chemical Society (ACS)
    Journal
    The Journal of Physical Chemistry C
    DOI
    10.1021/jp411128m
    ae974a485f413a2113503eed53cd6c53
    10.1021/jp411128m
    Scopus Count
    Collections
    Articles; Advanced Membranes and Porous Materials Research Center; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Chemical Science Program; Material Science and Engineering Program; KAUST Solar Center (KSC)

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