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dc.contributor.authorSevilla, Galo T.
dc.contributor.authorRojas, Jhonathan Prieto
dc.contributor.authorFahad, Hossain M.
dc.contributor.authorHussain, Aftab M.
dc.contributor.authorGhanem, Rawan
dc.contributor.authorSmith, Casey
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-08-03T11:47:41Z
dc.date.available2015-08-03T11:47:41Z
dc.date.issued2014-02-22
dc.identifier.issn09359648
dc.identifier.doi10.1002/adma.201305309
dc.identifier.doi10.1002/adma.201470116
dc.identifier.urihttp://hdl.handle.net/10754/563402
dc.description.abstractAn industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipWe would like to thank the Competitive Research Grant: CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project. We also thank Dr. Casey Smith for mask design. We are also grateful to Maria Peredo Silva for the rendition of Figure 2. Finally we thank Mrs. Kelly Rader for proof reading our revised manuscript.
dc.publisherWiley-VCH Verlag
dc.subjectbrain-architecture inspired computation
dc.subjectFinFET
dc.subjectflexible
dc.subjectsilicon
dc.subjecttransparent
dc.titleFlexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentThe KAUST School
dc.identifier.journalAdvanced Materials
kaust.personSevilla, Galo T.
kaust.personRojas, Jhonathan Prieto
kaust.personFahad, Hossain M.
kaust.personHussain, Aftab M.
kaust.personSmith, Casey
kaust.personHussain, Muhammad Mustafa
kaust.personGhanem, Rawan
kaust.grant.numberCRG-1-2012-HUS-008
kaust.acknowledged.supportUnitCompetitive Research
kaust.acknowledged.supportUnitAdvanced Nanofabrication Facilities
dc.date.published-online2014-02-22
dc.date.published-print2014-05


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