Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation
Type
ArticleAuthors
Sevilla, Galo T.
Rojas, Jhonathan Prieto

Fahad, Hossain M.
Hussain, Aftab M.

Ghanem, Rawan

Smith, Casey
Hussain, Muhammad Mustafa

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Integrated Nanotechnology Lab
Physical Science and Engineering (PSE) Division
The KAUST School
KAUST Grant Number
CRG-1-2012-HUS-008Date
2014-02-22Online Publication Date
2014-02-22Print Publication Date
2014-05Permanent link to this record
http://hdl.handle.net/10754/563402
Metadata
Show full item recordAbstract
An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Sponsors
We would like to thank the Competitive Research Grant: CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project. We also thank Dr. Casey Smith for mask design. We are also grateful to Maria Peredo Silva for the rendition of Figure 2. Finally we thank Mrs. Kelly Rader for proof reading our revised manuscript.Publisher
Wiley-VCH VerlagJournal
Advanced Materialsae974a485f413a2113503eed53cd6c53
10.1002/adma.201305309