Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation
AuthorsSevilla, Galo T.
Rojas, Jhonathan Prieto
Fahad, Hossain M.
Hussain, Aftab M.
Hussain, Muhammad Mustafa
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Physical Science and Engineering (PSE) Division
The KAUST School
KAUST Grant NumberCRG-1-2012-HUS-008
Online Publication Date2014-02-22
Print Publication Date2014-05
Permanent link to this recordhttp://hdl.handle.net/10754/563402
MetadataShow full item record
AbstractAn industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
SponsorsWe would like to thank the Competitive Research Grant: CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project. We also thank Dr. Casey Smith for mask design. We are also grateful to Maria Peredo Silva for the rendition of Figure 2. Finally we thank Mrs. Kelly Rader for proof reading our revised manuscript.