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dc.contributor.authorGuo, Zaibing
dc.contributor.authorMi, Wenbo
dc.contributor.authorLi, Jingqi
dc.contributor.authorCheng, Yingchun
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2015-08-03T11:47:16Z
dc.date.available2015-08-03T11:47:16Z
dc.date.issued2014-03-03
dc.identifier.citationGuo, Z. B., Mi, W. B., Li, J. Q., Cheng, Y. C., & Zhang, X. X. (2014). Enhancement in anomalous Hall resistivity of Co/Pd multilayer and CoPd alloy by Ga + ion irradiation. EPL (Europhysics Letters), 105(4), 46005. doi:10.1209/0295-5075/105/46005
dc.identifier.issn02955075
dc.identifier.doi10.1209/0295-5075/105/46005
dc.identifier.urihttp://hdl.handle.net/10754/563386
dc.description.abstractIn this paper, we report the effect of Ga+ ion irradiation on anomalous Hall effect (AHE) and longitudinal resistivity (ρxx) in [Co(3 Å)/Pd(5 Å)]80 multilayer and Co 42Pd58 alloy. 4- and 2-fold increases in anomalous Hall resistivity (ρAH) in the Co/Pd multilayer and CoPd alloy have been observed after irradiations at doses of 2.4 × 1015 and 3.3×10 15 ions/cm2, respectively. Skew scattering and side jump contributions to AHE have been analyzed based on the scaling relationship ρAH = aρxx + bρ2xx. For the Co/Pd multilayer, AHE is mainly affected by ion irradiation-induced interface diffusion and defects. For the CoPd alloy, the increase in doses above 1.5 × 1015 ions/cm2 induces a sign change in skew scattering, followed by the skew scattering contribution to AHE overwhelming the side jump contribution, this phenomenon should be attributed to irradiation-induced defects and modifications in chemical ordering. © Copyright EPLA, 2014.
dc.publisherIOP Publishing
dc.titleEnhancement in anomalous Hall resistivity of Co/Pd multilayer and CoPd alloy by Ga+ ion irradiation
dc.typeArticle
dc.contributor.departmentCore Labs
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalEPL (Europhysics Letters)
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, China
kaust.personGuo, Zaibing
kaust.personLi, Jingqi
kaust.personZhang, Xixiang
kaust.personCheng, Yingchun
dc.date.published-online2014-03-03
dc.date.published-print2014-02-01


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