Enhancement in anomalous Hall resistivity of Co/Pd multilayer and CoPd alloy by Ga+ ion irradiation
Type
ArticleKAUST Department
Core LabsMaterial Science and Engineering Program
Nanofabrication Core Lab
Physical Science and Engineering (PSE) Division
Date
2014-03-03Online Publication Date
2014-03-03Print Publication Date
2014-02-01Permanent link to this record
http://hdl.handle.net/10754/563386
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In this paper, we report the effect of Ga+ ion irradiation on anomalous Hall effect (AHE) and longitudinal resistivity (ρxx) in [Co(3 Å)/Pd(5 Å)]80 multilayer and Co 42Pd58 alloy. 4- and 2-fold increases in anomalous Hall resistivity (ρAH) in the Co/Pd multilayer and CoPd alloy have been observed after irradiations at doses of 2.4 × 1015 and 3.3×10 15 ions/cm2, respectively. Skew scattering and side jump contributions to AHE have been analyzed based on the scaling relationship ρAH = aρxx + bρ2xx. For the Co/Pd multilayer, AHE is mainly affected by ion irradiation-induced interface diffusion and defects. For the CoPd alloy, the increase in doses above 1.5 × 1015 ions/cm2 induces a sign change in skew scattering, followed by the skew scattering contribution to AHE overwhelming the side jump contribution, this phenomenon should be attributed to irradiation-induced defects and modifications in chemical ordering. © Copyright EPLA, 2014.Citation
Guo, Z. B., Mi, W. B., Li, J. Q., Cheng, Y. C., & Zhang, X. X. (2014). Enhancement in anomalous Hall resistivity of Co/Pd multilayer and CoPd alloy by Ga + ion irradiation. EPL (Europhysics Letters), 105(4), 46005. doi:10.1209/0295-5075/105/46005Publisher
IOP PublishingJournal
EPL (Europhysics Letters)ae974a485f413a2113503eed53cd6c53
10.1209/0295-5075/105/46005