Type
ArticleAuthors
Hussain, Aftab M.
Fahad, Hossain M.
Singh, Nirpendra

Sevilla, Galo T.

Schwingenschlögl, Udo

Hussain, Muhammad Mustafa

KAUST Department
Computational Physics and Materials Science (CPMS)Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2014-01-13Online Publication Date
2014-01-13Print Publication Date
2014-04Permanent link to this record
http://hdl.handle.net/10754/563338
Metadata
Show full item recordAbstract
We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Citation
Hussain, A. M., Fahad, H. M., Singh, N., Sevilla, G. A. T., Schwingenschlögl, U., & Hussain, M. M. (2014). Tin - an unlikely ally for silicon field effect transistors? Physica Status Solidi (RRL) - Rapid Research Letters, 8(4), 332–335. doi:10.1002/pssr.201308300Sponsors
This work was supported by the OCRF Competitive Research Grant (CRG-1-2012-HUS-008) and the Provost Award for Aftab M. Hussain.Publisher
Wileyae974a485f413a2113503eed53cd6c53
10.1002/pssr.201308300