AuthorsHussain, Aftab M.
Fahad, Hossain M.
Sevilla, Galo T.
Hussain, Muhammad Mustafa
KAUST DepartmentComputational Physics and Materials Science (CPMS)
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2014-01-13
Print Publication Date2014-04
Permanent link to this recordhttp://hdl.handle.net/10754/563338
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AbstractWe explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
SponsorsThis work was supported by the OCRF Competitive Research Grant (CRG-1-2012-HUS-008) and the Provost Award for Aftab M. Hussain.