AuthorsHussain, Aftab M.
Fahad, Hossain M.
Sevilla, Galo T.
Hussain, Muhammad Mustafa
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Materials Science and Engineering Program
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Computational Physics and Materials Science (CPMS)
Integrated Nanotechnology Lab
Permanent link to this recordhttp://hdl.handle.net/10754/563338
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AbstractWe explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
SponsorsThis work was supported by the OCRF Competitive Research Grant (CRG-1-2012-HUS-008) and the Provost Award for Aftab M. Hussain.