Efficiency dip observed with InGaN-based multiple quantum well solar cells
Type
ArticleKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Solar Center (KSC)
Nano Energy Lab
Date
2014-10-29Online Publication Date
2014-10-29Print Publication Date
2014-12-15Permanent link to this record
http://hdl.handle.net/10754/563268
Metadata
Show full item recordAbstract
The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.Citation
Lai, K. Y., Lin, G. J., Wu, Y.-R., Tsai, M.-L., & He, J.-H. (2014). Efficiency dip observed with InGaN-based multiple quantum well solar cells. Optics Express, 22(S7), A1753. doi:10.1364/oe.22.0a1753Sponsors
The research was supported in part by National Science Council (102-2221-E-008-074, 102-2628-M-002-006-MY3 and 101-2221-E-002-115-MY2), National Taiwan University (103R7823), the Aim for the Top University Project of National Central University (103G903-2), and Energy Technology Program for Academia, Bureau of Energy, Ministry of Economic Affairs (102-E0606).Publisher
The Optical SocietyJournal
Optics Expressae974a485f413a2113503eed53cd6c53
10.1364/OE.22.0A1753