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    Efficiency dip observed with InGaN-based multiple quantum well solar cells

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    Type
    Article
    Authors
    Lai, Kunyu
    Lin, G. J.
    Wu, Yuhrenn
    Tsai, Menglun
    He, Jr-Hau cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    KAUST Solar Center (KSC)
    Nano Energy Lab
    Date
    2014-10-29
    Online Publication Date
    2014-10-29
    Print Publication Date
    2014-12-15
    Permanent link to this record
    http://hdl.handle.net/10754/563268
    
    Metadata
    Show full item record
    Abstract
    The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.
    Sponsors
    The research was supported in part by National Science Council (102-2221-E-008-074, 102-2628-M-002-006-MY3 and 101-2221-E-002-115-MY2), National Taiwan University (103R7823), the Aim for the Top University Project of National Central University (103G903-2), and Energy Technology Program for Academia, Bureau of Energy, Ministry of Economic Affairs (102-E0606).
    Publisher
    The Optical Society
    Journal
    Optics Express
    DOI
    10.1364/OE.22.0A1753
    ae974a485f413a2113503eed53cd6c53
    10.1364/OE.22.0A1753
    Scopus Count
    Collections
    Articles; Electrical Engineering Program; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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