Efficiency dip observed with InGaN-based multiple quantum well solar cells
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Solar Center (KSC)
Nano Energy Lab
Online Publication Date2014-10-29
Print Publication Date2014-12-15
Permanent link to this recordhttp://hdl.handle.net/10754/563268
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AbstractThe dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.
CitationLai, K. Y., Lin, G. J., Wu, Y.-R., Tsai, M.-L., & He, J.-H. (2014). Efficiency dip observed with InGaN-based multiple quantum well solar cells. Optics Express, 22(S7), A1753. doi:10.1364/oe.22.0a1753
SponsorsThe research was supported in part by National Science Council (102-2221-E-008-074, 102-2628-M-002-006-MY3 and 101-2221-E-002-115-MY2), National Taiwan University (103R7823), the Aim for the Top University Project of National Central University (103G903-2), and Energy Technology Program for Academia, Bureau of Energy, Ministry of Economic Affairs (102-E0606).
PublisherThe Optical Society