• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguideTheses and Dissertations LibguideSubmit an Item

    Statistics

    Display statistics

    Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Type
    Article
    Authors
    Li, Jingqi
    Wang, Qingxiao
    Yue, Weisheng
    Guo, Zaibing
    Li, Liang
    Zhao, Chao cc
    Wang, Xianbin
    Abutaha, Anas I. cc
    Alshareef, Husam N. cc
    Zhang, Yafei
    Zhang, Xixiang cc
    KAUST Department
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Core Labs
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Nanofabrication Core Lab
    Physical Science and Engineering (PSE) Division
    Date
    2014
    Permanent link to this record
    http://hdl.handle.net/10754/563223
    
    Metadata
    Show full item record
    Abstract
    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.
    Citation
    Li, J., Wang, Q., Yue, W., Guo, Z., Li, L., Zhao, C., … Zhang, X. X. (2014). Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors. Nanoscale, 6(15), 8956–8961. doi:10.1039/c4nr00978a
    Sponsors
    This research was supported by King Abdullah University of Science and Technology (KAUST). The authors would like to thank Zhihong Wang, Yang Yang, Longqing Chen, Basil Chew, Ahad A Syed, Elhadj M. Diallo and Abdulrazaq Alharbi in the Nanofabrication, Imaging & Characterization core labs at KAUST for their help in device fabrication and characterization.
    Publisher
    Royal Society of Chemistry (RSC)
    Journal
    Nanoscale
    DOI
    10.1039/c4nr00978a
    PubMed ID
    24965261
    ae974a485f413a2113503eed53cd6c53
    10.1039/c4nr00978a
    Scopus Count
    Collections
    Nanofabrication Core Lab; Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

    entitlement

    Related articles

    • The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.
    • Authors: Xiao Z, Camino FE
    • Issue date: 2009 Apr 1
    • Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices.
    • Authors: Kimbrough J, Williams L, Yuan Q, Xiao Z
    • Issue date: 2020 Dec 25
    • Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material.
    • Authors: Xian X, Yan K, Zhou W, Jiao L, Wu Z, Liu Z
    • Issue date: 2009 Dec 16
    • Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors.
    • Authors: Li J, Cheng Y, Guo Z, Wang Z, Zhu Z, Zhang Q, Chan-Park MB, Schwingenschlögl U, Zhang XX
    • Issue date: 2013 Mar 21
    • Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.
    • Authors: Wei D, Zhang Y, Yang Y, Hasko DG, Chu D, Teo KB, Amaratunga GA, Milne WI
    • Issue date: 2008 Dec 23
    DSpace software copyright © 2002-2022  DuraSpace
    Quick Guide | Contact Us | KAUST University Library
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.