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dc.contributor.authorHanna, Amir
dc.contributor.authorSevilla, Galo T.
dc.contributor.authorGhoneim, Mohamed T.
dc.contributor.authorHussain, Aftab M.
dc.contributor.authorBahabry, Rabab R.
dc.contributor.authorSyed, Ahad A.
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-08-03T11:37:09Z
dc.date.available2015-08-03T11:37:09Z
dc.date.issued2013-12-23
dc.identifier.issn18626254
dc.identifier.doi10.1002/pssr.201308282
dc.identifier.urihttp://hdl.handle.net/10754/563159
dc.description.abstractWe demonstrate a new thin film transistor (TFT) architecture that allows expansion of the device width using continuous fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.5× increase in 'ON' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar 'OFF' current value, ~100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers an interesting opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipThis work is supported under Competitive Research Grant Funding Program (CRG-1-2012-HUS-008) by KAUST Office of Competitive Research Funds (OCRF).
dc.publisherWiley
dc.subjectDisplays
dc.subjectThin film transistors
dc.subjectZnO
dc.titleWavy channel thin film transistor architecture for area efficient, high performance and low power displays
dc.typeArticle
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalphysica status solidi (RRL) - Rapid Research Letters
kaust.personHanna, Amir
kaust.personSevilla, Galo T.
kaust.personGhoneim, Mohamed T.
kaust.personHussain, Aftab M.
kaust.personHussain, Muhammad Mustafa
kaust.personBahabry, Rabab R.
kaust.personSyed, Ahad A.
kaust.grant.numberCRG-1-2012-HUS-008
kaust.acknowledged.supportUnitCompetitive Research Grant Funding Program
kaust.acknowledged.supportUnitOffice of Competitive Research Funds (OCRF)
dc.date.published-online2013-12-23
dc.date.published-print2014-03


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