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dc.contributor.authorBhansali, Unnat Sampatraj
dc.contributor.authorKhan, Yasser
dc.contributor.authorCha, Dong Kyu
dc.contributor.authorAlmadhoun, Mahmoud N.
dc.contributor.authorLi, Ruipeng
dc.contributor.authorChen, Long
dc.contributor.authorAmassian, Aram
dc.contributor.authorOdeh, Ihab N.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-08-03T11:37:08Z
dc.date.available2015-08-03T11:37:08Z
dc.date.issued2013-11-14
dc.identifier.citationBhansali, U. S., Khan, M. A., Cha, D., AlMadhoun, M. N., Li, R., Chen, L., … Alshareef, H. N. (2013). Metal-Free, Single-Polymer Device Exhibits Resistive Memory Effect. ACS Nano, 7(12), 10518–10524. doi:10.1021/nn403873c
dc.identifier.issn19360851
dc.identifier.pmid24206048
dc.identifier.doi10.1021/nn403873c
dc.identifier.urihttp://hdl.handle.net/10754/563158
dc.description.abstractAll-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.
dc.description.sponsorshipThe authors would like to thank Mrs. Supriya Chewle for her help with the artistic rendering of the images. H.N.A. acknowledges the financial support from the KAUST baseline fund and Saudi Basic Industries Corporation (SABIC) Grant No. 2000000015.
dc.publisherAmerican Chemical Society (ACS)
dc.subjectflexible substrates
dc.subjectmetal filament
dc.subjectPEDOT:PSS
dc.subjectpolymer electrodes
dc.subjectresistive memory
dc.subjectsolution process
dc.titleMetal-free, single-polymer device exhibits resistive memory effect
dc.typeArticle
dc.contributor.departmentCore Labs
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOffice of the VP
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSABIC - Corporate Research and Innovation Center (CRI) at KAUST
dc.identifier.journalACS Nano
kaust.personBhansali, Unnat Sampatraj
kaust.personCha, Dong Kyu
kaust.personLi, Ruipeng
kaust.personChen, Long
kaust.personAmassian, Aram
kaust.personAlshareef, Husam N.
kaust.personKhan, Yasser
dc.date.published-online2013-11-14
dc.date.published-print2013-12-23


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