Metal-free, single-polymer device exhibits resistive memory effect
AuthorsBhansali, Unnat Sampatraj
Cha, Dong Kyu
Almadhoun, Mahmoud N.
Odeh, Ihab N.
Alshareef, Husam N.
KAUST DepartmentCore Labs
Electrical Engineering Program
Functional Nanomaterials and Devices Research Group
Imaging and Characterization Core Lab
KAUST Solar Center (KSC)
Material Science and Engineering Program
Office of the VP
Organic Electronics and Photovoltaics Group
Physical Science and Engineering (PSE) Division
SABIC - Corporate Research and Innovation Center (CRI) at KAUST
Online Publication Date2013-11-14
Print Publication Date2013-12-23
Permanent link to this recordhttp://hdl.handle.net/10754/563158
MetadataShow full item record
AbstractAll-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.
CitationBhansali, U. S., Khan, M. A., Cha, D., AlMadhoun, M. N., Li, R., Chen, L., … Alshareef, H. N. (2013). Metal-Free, Single-Polymer Device Exhibits Resistive Memory Effect. ACS Nano, 7(12), 10518–10524. doi:10.1021/nn403873c
SponsorsThe authors would like to thank Mrs. Supriya Chewle for her help with the artistic rendering of the images. H.N.A. acknowledges the financial support from the KAUST baseline fund and Saudi Basic Industries Corporation (SABIC) Grant No. 2000000015.
PublisherAmerican Chemical Society (ACS)
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