Metal-free, single-polymer device exhibits resistive memory effect
AuthorsBhansali, Unnat Sampatraj
Cha, Dong Kyu
Almadhoun, Mahmoud N.
Odeh, Ihab N.
Alshareef, Husam N.
KAUST DepartmentMaterials Science and Engineering Program
SABIC - Corporate Research and Innovation Center (CRI) at KAUST
Physical Sciences and Engineering (PSE) Division
KAUST Solar Center (KSC)
Organic Electronics and Photovoltaics Group
Functional Nanomaterials and Devices Research Group
Permanent link to this recordhttp://hdl.handle.net/10754/563158
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AbstractAll-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.
SponsorsThe authors would like to thank Mrs. Supriya Chewle for her help with the artistic rendering of the images. H.N.A. acknowledges the financial support from the KAUST baseline fund and Saudi Basic Industries Corporation (SABIC) Grant No. 2000000015.
PublisherAmerican Chemical Society (ACS)
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