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dc.contributor.authorRojas, Jhonathan Prieto
dc.contributor.authorGhoneim, Mohamed T.
dc.contributor.authorYoung, Chadwin
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-08-03T11:33:54Z
dc.date.available2015-08-03T11:33:54Z
dc.date.issued2013-10
dc.identifier.citationRojas, J. P., Ghoneim, M. T., Young, C. D., & Hussain, M. M. (2013). Flexible High-$\kappa$/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric. IEEE Transactions on Electron Devices, 60(10), 3305–3309. doi:10.1109/ted.2013.2278186
dc.identifier.issn00189383
dc.identifier.doi10.1109/TED.2013.2278186
dc.identifier.urihttp://hdl.handle.net/10754/563021
dc.description.abstractImplementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\rm cm}2 and thickness: 25 \mu{\rm m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.
dc.description.sponsorshipThis work was supported in part by King Abdullah University of Science and Technology Office of Competitive Research Fund and in part by the Competitive Research under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor H. Shang.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectBending curvature
dc.subjectflexible
dc.subjecthigh k
dc.subjectmetal gate
dc.subjectmetal-insulator-metal capacitors (MIMCAPs)
dc.subjectsilicon (100)
dc.titleFlexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric
dc.typeArticle
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalIEEE Transactions on Electron Devices
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas, Dallas, TX 75080, United States
kaust.personRojas, Jhonathan Prieto
kaust.personGhoneim, Mohamed T.
kaust.personHussain, Muhammad Mustafa


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