Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

Abstract
Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\rm cm}2 and thickness: 25 \mu{\rm m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

Citation
Rojas, J. P., Ghoneim, M. T., Young, C. D., & Hussain, M. M. (2013). Flexible High-/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric. IEEE Transactions on Electron Devices, 60(10), 3305–3309. doi:10.1109/ted.2013.2278186

Acknowledgements
This work was supported in part by King Abdullah University of Science and Technology Office of Competitive Research Fund and in part by the Competitive Research under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor H. Shang.

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
IEEE Transactions on Electron Devices

DOI
10.1109/TED.2013.2278186

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