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dc.contributor.authorAktakka, Ethem Erkan
dc.contributor.authorGhafouri, Niloufar
dc.contributor.authorSmith, Casey
dc.contributor.authorPeterson, Rebecca Lorenz
dc.contributor.authorHussain, Muhammad Mustafa
dc.contributor.authorNajafi, Khalil
dc.date.accessioned2015-08-03T11:33:52Z
dc.date.available2015-08-03T11:33:52Z
dc.date.issued2013-10
dc.identifier.citationAktakka, E. E., Ghafouri, N., Smith, C. E., Peterson, R. L., Hussain, M. M., & Najafi, K. (2013). Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate. IEEE Electron Device Letters, 34(10), 1334–1336. doi:10.1109/led.2013.2277693
dc.identifier.issn07413106
dc.identifier.doi10.1109/LED.2013.2277693
dc.identifier.urihttp://hdl.handle.net/10754/563020
dc.description.abstractThis letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.
dc.description.sponsorshipThis work was supported by King Abdullah University of Science and Technology through an Academic Excellence Alliance Global Collaborative Research Grant. The review of this letter was arranged by Editor J. Cai.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectAntimony telluride (Sb2Te3)
dc.subjectbismuth telluride (Bi2Te 3)
dc.subjectCMOS
dc.subjectFinFET
dc.subjectheterogeneous integration
dc.subjectthermoelectricity.
dc.titlePost-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalIEEE Electron Device Letters
dc.contributor.institutionElectrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, MI 48109-2122, United States
kaust.personSmith, Casey
kaust.personHussain, Muhammad Mustafa


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