Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate
dc.contributor.author | Aktakka, Ethem Erkan | |
dc.contributor.author | Ghafouri, Niloufar | |
dc.contributor.author | Smith, Casey | |
dc.contributor.author | Peterson, Rebecca Lorenz | |
dc.contributor.author | Hussain, Muhammad Mustafa | |
dc.contributor.author | Najafi, Khalil | |
dc.date.accessioned | 2015-08-03T11:33:52Z | |
dc.date.available | 2015-08-03T11:33:52Z | |
dc.date.issued | 2013-10 | |
dc.identifier.citation | Aktakka, E. E., Ghafouri, N., Smith, C. E., Peterson, R. L., Hussain, M. M., & Najafi, K. (2013). Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate. IEEE Electron Device Letters, 34(10), 1334–1336. doi:10.1109/led.2013.2277693 | |
dc.identifier.issn | 07413106 | |
dc.identifier.doi | 10.1109/LED.2013.2277693 | |
dc.identifier.uri | http://hdl.handle.net/10754/563020 | |
dc.description.abstract | This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE. | |
dc.description.sponsorship | This work was supported by King Abdullah University of Science and Technology through an Academic Excellence Alliance Global Collaborative Research Grant. The review of this letter was arranged by Editor J. Cai. | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
dc.subject | Antimony telluride (Sb2Te3) | |
dc.subject | bismuth telluride (Bi2Te 3) | |
dc.subject | CMOS | |
dc.subject | FinFET | |
dc.subject | heterogeneous integration | |
dc.subject | thermoelectricity. | |
dc.title | Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate | |
dc.type | Article | |
dc.contributor.department | Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division | |
dc.contributor.department | Electrical Engineering Program | |
dc.contributor.department | Integrated Nanotechnology Lab | |
dc.contributor.department | Physical Science and Engineering (PSE) Division | |
dc.identifier.journal | IEEE Electron Device Letters | |
dc.contributor.institution | Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, MI 48109-2122, United States | |
kaust.person | Smith, Casey | |
kaust.person | Hussain, Muhammad Mustafa |
This item appears in the following Collection(s)
-
Articles
-
Physical Science and Engineering (PSE) Division
For more information visit: http://pse.kaust.edu.sa/ -
Electrical and Computer Engineering Program
For more information visit: https://cemse.kaust.edu.sa/ece -
Integrated Nanotechnology Lab
For more information visit: https://nanotechnology.kaust.edu.sa/Pages/Home.aspx -
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
For more information visit: https://cemse.kaust.edu.sa/