Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate
AuthorsAktakka, Ethem Erkan
Peterson, Rebecca Lorenz
Hussain, Muhammad Mustafa
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/563020
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AbstractThis letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.
CitationAktakka, E. E., Ghafouri, N., Smith, C. E., Peterson, R. L., Hussain, M. M., & Najafi, K. (2013). Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate. IEEE Electron Device Letters, 34(10), 1334–1336. doi:10.1109/led.2013.2277693
SponsorsThis work was supported by King Abdullah University of Science and Technology through an Academic Excellence Alliance Global Collaborative Research Grant. The review of this letter was arranged by Editor J. Cai.
JournalIEEE Electron Device Letters