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dc.contributor.authorMi, Wenbo
dc.contributor.authorGuo, Zaibing
dc.contributor.authorFeng, X. P.
dc.contributor.authorBai, Haili
dc.date.accessioned2015-08-03T11:33:51Z
dc.date.available2015-08-03T11:33:51Z
dc.date.issued2013-10
dc.identifier.issn13596454
dc.identifier.doi10.1016/j.actamat.2013.07.016
dc.identifier.urihttp://hdl.handle.net/10754/563019
dc.description.abstractEpitaxial γ′-Fe4N films with (1 0 0) and (1 1 0) orientations have been fabricated by reactive sputtering; these films were characterized by X-ray θ-2θ and φ scans, pole figures and high-resolution transmission electron microscopy. The film surface is very smooth as the film is less than 58 nm thick. The films exhibit soft ferromagnetism, and the saturation magnetization decreases with an increase in temperature, following Bloch's spin wave theory. The films also exhibit a metallic conductance mechanism. Below 30 K, magnetoresistance (MR) is positive and increases linearly with the applied field in the high-field range. In the low-field range, MR increases abruptly. Above 30 K, MR is negative, and its value increases linearly with the applied field.
dc.description.sponsorshipThis work was supported by the National Natural Foundation of China (51172126) and the Key Project of Natural Foundation of Tianjin City (12JCZDJC27100).
dc.publisherElsevier BV
dc.subjectFe4N
dc.subjectMagnetic properties
dc.subjectMagnetoresistance
dc.subjectStructure
dc.titleReactively sputtered epitaxial γ′-Fe4N films: Surface morphology, microstructure, magnetic and electrical transport properties
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentCore Labs
dc.identifier.journalActa Materialia
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Tianjin University, Tianjin 300072, China
kaust.personGuo, Zaibing


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