Large scale graphene/hexagonal boron nitride heterostructure for tunable plasmonics
KAUST DepartmentImaging and Characterization Core Lab
Advanced Nanofabrication, Imaging and Characterization Core Lab
Online Publication Date2013-09-01
Print Publication Date2014-02
Permanent link to this recordhttp://hdl.handle.net/10754/562956
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AbstractVertical integration of hexagonal boron nitride (h-BN) and graphene for the fabrication of vertical field-effect transistors or tunneling diodes has stimulated intense interest recently due to the enhanced performance offered by combining an ultrathin dielectric with a semi-metallic system. Wafer scale fabrication and processing of these heterostructures is needed to make large scale integrated circuitry. In this work, by using remote discharged, radio-frequency plasma chemical vapor deposition, wafer scale, high quality few layer h-BN films are successfully grown. By using few layer h-BN films as top gate dielectric material, the plasmon energy of graphene can be tuned by electrostatic doping. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. Interestingly, the plasmonic resonances can be tuned to higher frequencies with increasing layer thickness of the disks, showing that such vertical stacking provides a viable strategy to provide wide window tuning of the plasmons beyond the limitation of the monolayer. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
CitationZhang, K., Yap, F. L., Li, K., Ng, C. T., Li, L. J., & Loh, K. P. (2013). Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics. Advanced Functional Materials, 24(6), 731–738. doi:10.1002/adfm.201302009
SponsorsNational Research Foundation CRP award "Nonlinear Plasmonics to Overcome the Conventional Limit (NRF2012NRF-CRP002-038)" as well as "Novel 2D materials with tailored properties: beyond graphene (NRF2010NRF-CRP001-087)" are kindly acknowledged for supporting this research.
JournalAdvanced Functional Materials