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dc.contributor.authorMosad, Ahmed G.*
dc.contributor.authorFouda, Mohamed E.*
dc.contributor.authorKhatib, Moustafa A.*
dc.contributor.authorSalama, Khaled N.*
dc.contributor.authorRadwan, Ahmed Gomaa*
dc.date.accessioned2015-08-03T11:16:30Zen
dc.date.available2015-08-03T11:16:30Zen
dc.date.issued2013-09en
dc.identifier.issn00262692en
dc.identifier.doi10.1016/j.mejo.2013.04.005en
dc.identifier.urihttp://hdl.handle.net/10754/562943en
dc.description.abstractThis paper presents an improved memristor-based relaxation oscillator which offers higher frequency and wider tunning range than the existing reactance-less oscillators. It also has the capability of operating on two positive supplies or alternatively a positive and negative supply. Furthermore, it has the advantage that it can be fully integrated on-chip providing an area-efficient solution. On the other hand, The oscillation concept is discussed then a complete mathematical analysis of the proposed oscillator is introduced. Furthermore, the power consumption of the new relaxation circuit is discussed and validated by the PSPICE circuit simulations showing an excellent agreement. MATLAB results are also introduced to demonstrate the resistance range and the corresponding frequency range which can be obtained from the proposed relaxation oscillator. © 2013 Elsevier Ltd.en
dc.publisherElsevier BVen
dc.subjectMemristive circuitsen
dc.subjectMemristoren
dc.subjectReactance-less oscillatoren
dc.subjectRelaxation oscillatoren
dc.titleImproved memristor-based relaxation oscillatoren
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Program*
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division*
dc.contributor.departmentSensors Lab*
dc.identifier.journalMicroelectronics Journalen
dc.contributor.institutionNanoelectronics Integrated Systems Center (NISC), Nile University, Cairo, Egypt*
dc.contributor.institutionEngineering Mathematics Department, Cairo University, Egypt*
kaust.authorSalama, Khaled N.*


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