Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)
KAUST DepartmentElectrical Engineering Program
Integrated Nanotechnology Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
KAUST Grant NumberCRG-1-2012-HUS-008
Online Publication Date2013-08-16
Print Publication Date2013-11
Permanent link to this recordhttp://hdl.handle.net/10754/562910
MetadataShow full item record
AbstractWe demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
CitationHussain, A. M., Fahad, H. M., Sevilla, G. A. T., & Hussain, M. M. (2013). Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100). Physica Status Solidi (RRL) - Rapid Research Letters, 7(11), 966–970. doi:10.1002/pssr.201308019
SponsorsThis work is supported under Competitive Research Grant Funding Program (CRG-1-2012-HUS-008) by KAUST Office of Competitive Research Funds (OCRF).