Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)
Type
ArticleKAUST Department
Electrical Engineering ProgramIntegrated Nanotechnology Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
KAUST Grant Number
CRG-1-2012-HUS-008Date
2013-08-16Online Publication Date
2013-08-16Print Publication Date
2013-11Permanent link to this record
http://hdl.handle.net/10754/562910
Metadata
Show full item recordAbstract
We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Citation
Hussain, A. M., Fahad, H. M., Sevilla, G. A. T., & Hussain, M. M. (2013). Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100). Physica Status Solidi (RRL) - Rapid Research Letters, 7(11), 966–970. doi:10.1002/pssr.201308019Sponsors
This work is supported under Competitive Research Grant Funding Program (CRG-1-2012-HUS-008) by KAUST Office of Competitive Research Funds (OCRF).Publisher
Wileyae974a485f413a2113503eed53cd6c53
10.1002/pssr.201308019