Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
MetadataShow full item record
AbstractUtilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.
PublisherAmerican Chemical Society (ACS)
- Investigation of transfer characteristics of high performance graphene flakes.
- Authors: Venugopal G, Krishnamoorthy K, Kim SJ
- Issue date: 2013 May
- High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors.
- Authors: Liao L, Bai J, Qu Y, Lin YC, Li Y, Huang Y, Duan X
- Issue date: 2010 Apr 13
- Quantum capacitance limited vertical scaling of graphene field-effect transistor.
- Authors: Xu H, Zhang Z, Wang Z, Wang S, Liang X, Peng LM
- Issue date: 2011 Mar 22
- Coplanar-gate transparent graphene transistors and inverters on plastic.
- Authors: Kim BJ, Lee SK, Kang MS, Ahn JH, Cho JH
- Issue date: 2012 Oct 23
- Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.
- Authors: Farmer DB, Chiu HY, Lin YM, Jenkins KA, Xia F, Avouris P
- Issue date: 2009 Dec