Copper vanadate nanowires-based MIS capacitors: Synthesis, characterization, and their electrical charge storage applications
Rana, Usman Ali
Sarfraz, Mansoor M.
Warsi, Muhammad Farooq
Ashiq, Muhammad Naeem
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2013-07-14
Print Publication Date2013-08
Permanent link to this recordhttp://hdl.handle.net/10754/562862
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AbstractCopper vanadate (CVO) nanowires were grown on Si/SiO2 substrates by thermal annealing technique. A thin film of a CVO precursor at 550 C under an ambient atmosphere could also be prepared. The electrical properties of the nanowires embedded in the dielectrical layer were examined by capacitance-voltage (C-V) measurements. The C-V curves for Au/CVO nanowires embedded in an hafnium oxide layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis loop when the gate bias was swept cyclically. The hysteresis characteristics were studied further at different frequencies, which clearly indicated that the traps in the nanowires have a large charging-discharging time and thus the as-synthesized nanowires can be utilized for electrical charge storage devices. © 2013 Springer Science+Business Media Dordrecht.
CitationShahid, M., Nafady, A., Shakir, I., Rana, U. A., Sarfraz, M., Warsi, M. F., … Ashiq, M. N. (2013). Copper vanadate nanowires-based MIS capacitors: synthesis, characterization, and their electrical charge storage applications. Journal of Nanoparticle Research, 15(8). doi:10.1007/s11051-013-1826-8
SponsorsThis project was supported by King Saud University, Deanship of Scientific Research, College of Science Research Center. One of the authors (M. F. Warsi) is highly thankful to the Islamia University Bahawalpur (Pakistan) and Higher Education Commission (HEC) of Pakistan.
JournalJournal of Nanoparticle Research