High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c
McLachlan, Martyn A.
Anthopoulos, Thomas D.
KAUST DepartmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
Imaging and Characterization Core Lab
KAUST Solar Center (KSC)
Material Science and Engineering Program
Organic Electronics and Photovoltaics Group
Physical Science and Engineering (PSE) Division
Online Publication Date2013-06-25
Print Publication Date2013-08-21
Permanent link to this recordhttp://hdl.handle.net/10754/562822
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AbstractAn aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
SponsorsY. H. L., H. F., M. M., and T. D. A. are grateful to Dutch Polymer Institute (DPI) S-PLORE grant no. 735, and European Research Council (ERC) AMPRO project no. 280221 for financial support.