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dc.contributor.authorZong, Baoyu
dc.contributor.authorGoh, J. Y.
dc.contributor.authorGuo, Zaibing
dc.contributor.authorLuo, Ping
dc.contributor.authorWang, Chenchen
dc.contributor.authorQiu, Jinjun
dc.contributor.authorHo, Pin
dc.contributor.authorChen, Yunjie
dc.contributor.authorZhang, Mingsheng
dc.contributor.authorHan, Guchang
dc.date.accessioned2015-08-03T11:05:02Z
dc.date.available2015-08-03T11:05:02Z
dc.date.issued2013-05-20
dc.identifier.issn09574484
dc.identifier.doi10.1088/0957-4484/24/24/245303
dc.identifier.urihttp://hdl.handle.net/10754/562768
dc.description.abstractA novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half-pitch without alignment issues. Depending on the different dry-etch mechanisms in transferring high and low density nanopatterns, suitable dry-etch angles and methods are studied for the transfer of high density nanopatterns. Some novel process methods have also been developed to eliminate the sidewall and other conversion obstacles for obtaining high density of uniform metallic nanopatterns. With these methods, ultrahigh density trilayer crossbar devices (∼2 × 1010 bit cm-2-kilobit electronic memory), which are composed of built-in practical magnetoresistive nanocells, have been achieved. This scalable process that we have developed provides the relevant industries with a cheap means to commercially fabricate three-dimensional high density metal-cell-metal nanodevices. © 2013 IOP Publishing Ltd.
dc.publisherIOP Publishing
dc.titleFabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentCore Labs
dc.identifier.journalNanotechnology
dc.contributor.institutionTemasek Laboratories, National University of Singapore, #09-02, 5A Engineering Drive 1, 117411, Singapore, Singapore
dc.contributor.institutionData Storage Institute, Agency for Science, Technology and Research (A STAR), DSI Building, 5 Engineering Drive 1, 117608, Singapore, Singapore
dc.contributor.institutionNational Junior College, 37 Hillcrest Road, 288913, Singapore, Singapore
kaust.personGuo, Zaibing


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