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dc.contributor.authorNayak, Pradipta K.
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorCha, Dong Kyu
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-08-03T11:04:41Z
dc.date.available2015-08-03T11:04:41Z
dc.date.issued2013-05-08
dc.identifier.issn19448244
dc.identifier.pmid23544956
dc.identifier.doi10.1021/am303235z
dc.identifier.urihttp://hdl.handle.net/10754/562759
dc.description.abstractIt is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.
dc.publisherAmerican Chemical Society
dc.subjectamorphous oxide semiconductor
dc.subjectfield-effect
dc.subjectsoft annealing
dc.subjectsolution-process
dc.subjectthin film transistor
dc.subjectzinc tin oxide
dc.titleImpact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentCore Labs
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.identifier.journalACS Applied Materials and Interfaces
kaust.personNayak, Pradipta K.
kaust.personHedhili, Mohamed N.
kaust.personCha, Dong Kyu
kaust.personAlshareef, Husam N.


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