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    A drift-diffusion-reaction model for excitonic photovoltaic bilayers: Photovoltaic bilayers: Asymptotic analysis and a 2D hdg finite element scheme

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    Type
    Article
    Authors
    Brinkman, Daniel
    Fellner, Klemens J.
    Markowich, Peter A. cc
    Wolfram, Marie Therese
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Applied Mathematics and Computational Science Program
    KAUST Grant Number
    KUK-I1-007-43
    Date
    2013-05
    Preprint Posting Date
    2012-02-03
    Permanent link to this record
    http://hdl.handle.net/10754/562736
    
    Metadata
    Show full item record
    Abstract
    We present and discuss a mathematical model for the operation of bilayer organic photovoltaic devices. Our model couples drift-diffusion-recombination equations for the charge carriers (specifically, electrons and holes) with a reaction-diffusion equation for the excitons/polaron pairs and Poisson's equation for the self-consistent electrostatic potential. The material difference (i.e. the HOMO/LUMO gap) of the two organic substrates forming the bilayer device is included as a work-function potential. Firstly, we perform an asymptotic analysis of the scaled one-dimensional stationary state system: (i) with focus on the dynamics on the interface and (ii) with the goal of simplifying the bulk dynamics away from the interface. Secondly, we present a two-dimensional hybrid discontinuous Galerkin finite element numerical scheme which is very well suited to resolve: (i) the material changes, (ii) the resulting strong variation over the interface, and (iii) the necessary upwinding in the discretization of drift-diffusion equations. Finally, we compare the numerical results with the approximating asymptotics. © 2013 World Scientific Publishing Company.
    Citation
    BRINKMAN, D., FELLNER, K., MARKOWICH, P. A., & WOLFRAM, M.-T. (2013). A DRIFT–DIFFUSION–REACTION MODEL FOR EXCITONIC PHOTOVOLTAIC BILAYERS: ASYMPTOTIC ANALYSIS AND A 2D HDG FINITE ELEMENT SCHEME. Mathematical Models and Methods in Applied Sciences, 23(05), 839–872. doi:10.1142/s0218202512500625
    Sponsors
    The authors acknowledge support from King Abdullah University of Science and Technology (KAUST) Award Number: KUK-I1-007-43. P. A. M. also acknowledges support from the Fondation Sciences Mathematique de Paris, in form of his Excellence Chair 2011, and from the Royal Society through his Wolfson Research Merit Award. M.-T.W. acknowledges financial support from the Austrian Science Foundation (FWF) via the Hertha Firnberg project TU56-N23. K. F. acknowledges the support of NaWi Graz.
    Publisher
    World Scientific Pub Co Pte Lt
    Journal
    Mathematical Models and Methods in Applied Sciences
    DOI
    10.1142/S0218202512500625
    arXiv
    1202.0817
    Additional Links
    http://arxiv.org/abs/arXiv:1202.0817v1
    ae974a485f413a2113503eed53cd6c53
    10.1142/S0218202512500625
    Scopus Count
    Collections
    Articles; Applied Mathematics and Computational Science Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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