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dc.contributor.authorKumar, Anup Bera
dc.contributor.authorPeng, Haiyang
dc.contributor.authorLourembam, James
dc.contributor.authorShen, Youde
dc.contributor.authorSun, Xiaowei
dc.contributor.authorWu, Tao
dc.date.accessioned2015-08-03T11:03:33Z
dc.date.available2015-08-03T11:03:33Z
dc.date.issued2013-04-25
dc.identifier.issn1616301X
dc.identifier.doi10.1002/adfm.201300509
dc.identifier.urihttp://hdl.handle.net/10754/562730
dc.description.abstractIntegrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low-temperature solution-based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light-switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipThis work is partially supported by the National Research Foundation of Singapore through the Competitive Research Programme (CRP Award No. NRF-CRP-4-2008-04), the Science and Engineering Research Council, Agency for Science, Technology and Research (A*STAR) of Singapore (project No. 092 151 0088), and the National Natural Science Foundation of China (NSFC) (project Nos. 61006037 and 61076015).
dc.publisherWiley
dc.subjectelectron tunneling
dc.subjectpersistent photoconductivity
dc.subjectresistive switching
dc.subjectSrTiO3
dc.subjectZnO
dc.titleA versatile light-switchable nanorod memory: Wurtzite ZnO on perovskite SrTiO3
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energy
dc.identifier.journalAdvanced Functional Materials
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
dc.contributor.institutionSchool of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singapore
dc.contributor.institutionSouth University of Science and Technology, 1088 Xue-Yuan Road, Shenzhen, Guangdong 518055, China
kaust.personWu, Tao


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