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    Solvent vapor annealing in the molecular regime drastically improves carrier transport in small-molecule thin-film transistors

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    Type
    Article
    Authors
    Khan, Hadayat Ullah
    Li, Ruipeng
    Ren, Yi
    Chen, Long
    Payne, Marcia M.
    Bhansali, Unnat Sampatraj
    Smilgies, Detlef Matthias
    Anthony, John Edward
    Amassian, Aram cc
    KAUST Department
    Chemical Engineering Program
    Core Labs
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Organic Electronics and Photovoltaics Group
    Physical Science and Engineering (PSE) Division
    KAUST Grant Number
    FIC/2010/04
    Date
    2013-02-08
    Online Publication Date
    2013-02-08
    Print Publication Date
    2013-04-10
    Permanent link to this record
    http://hdl.handle.net/10754/562719
    
    Metadata
    Show full item record
    Abstract
    We demonstrate a new way to investigate and control the solvent vapor annealing of solution-cast organic semiconductor thin films. Solvent vapor annealing of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) is investigated in situ using quartz crystal microbalance with dissipation (QCM-D) capability, allowing us to monitor both solvent mass uptake and changes in the mechanical rigidity of the film. Using time-resolved grazing incidence wide angle X-ray scattering (GIWAXS) and complementary static atomic force microscopy (AFM), we demonstrate that solvent vapor annealing in the molecular regime can cause significant performance improvements in organic thin film transistors (OTFTs), whereas allowing the solvent to percolate and form a liquid phase results in catastrophic reorganization and dewetting of the film, making the process counterproductive. Using these lessons we devise processing conditions which prevent percolation of the adsorbed solvent vapor molecules for extended periods, thus extending the benefits of solvent vapor annealing and improving carrier mobility by nearly two orders of magnitude. Ultimately, it is demonstrated that QCM-D is a very powerful sensor of the state of the adsorbed solvent as well as the thin film, thus making it suitable for process development as well as in-line process monitoring both in laboratory and in future manufacturing settings. © 2013 American Chemical Society.
    Citation
    Ullah Khan, H., Li, R., Ren, Y., Chen, L., Payne, M. M., Bhansali, U. S., … Amassian, A. (2013). Solvent Vapor Annealing in the Molecular Regime Drastically Improves Carrier Transport in Small-Molecule Thin-Film Transistors. ACS Applied Materials & Interfaces, 5(7), 2325–2330. doi:10.1021/am3025195
    Sponsors
    Part of this work was supported by KAUST's Office of Competitive Research Funds under Award FIC/2010/04. The authors acknowledge use of the D1 beamline at the Cornell High Energy Synchrotron Source supported by the National Science Foundation (NSF DMR-0936384) and NIH-NIGMS.
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Applied Materials & Interfaces
    DOI
    10.1021/am3025195
    PubMed ID
    23394109
    ae974a485f413a2113503eed53cd6c53
    10.1021/am3025195
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Chemical Engineering Program; Material Science and Engineering Program; KAUST Solar Center (KSC)

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