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dc.contributor.authorSun, Jian
dc.contributor.authorKosel, Jürgen
dc.date.accessioned2015-08-03T11:02:10Z
dc.date.available2015-08-03T11:02:10Z
dc.date.issued2013-04
dc.identifier.citationJian Sun, & Kosel, J. (2013). A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer. IEEE Electron Device Letters, 34(4), 547–549. doi:10.1109/led.2013.2247375
dc.identifier.issn07413106
dc.identifier.doi10.1109/LED.2013.2247375
dc.identifier.urihttp://hdl.handle.net/10754/562702
dc.description.abstractAn extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectExtraordinary magnetoresistance
dc.subjectmagnetic sensors
dc.subjectnoise
dc.subjectsemiconductor devices
dc.titleA top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentSensing, Magnetism and Microsystems Lab
dc.identifier.journalIEEE Electron Device Letters
kaust.personSun, Jian
kaust.personKosel, Jürgen


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