A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Sensing, Magnetism and Microsystems Lab
Permanent link to this recordhttp://hdl.handle.net/10754/562702
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AbstractAn extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.
JournalIEEE Electron Device Letters