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dc.contributor.authorMolinero, David G.
dc.contributor.authorLuo, Xi
dc.contributor.authorShen, Chao
dc.contributor.authorPalego, Cristiano
dc.contributor.authorHwang, James
dc.contributor.authorGoldsmith, Charles L.
dc.date.accessioned2015-08-03T11:01:02Z
dc.date.available2015-08-03T11:01:02Z
dc.date.issued2013-03
dc.identifier.issn15304388
dc.identifier.doi10.1109/TDMR.2013.2246567
dc.identifier.urihttp://hdl.handle.net/10754/562677
dc.description.abstractThis paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectDielectric films
dc.subjectdielectric materials
dc.subjectmicroelectromechanical devices
dc.subjectmicrowave devices
dc.subjectswitches
dc.titleLong-term RF burn-in effects on dielectric charging of MEMS capacitive switches
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterials Science and Engineering Program
dc.identifier.journalIEEE Transactions on Device and Materials Reliability
dc.contributor.institutionLehigh University, Bethlehem, PA 18015, United States
dc.contributor.institutionMEMtronics Corporation, Richardson, TX 75081, United States
kaust.personShen, Chao


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