Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

Type
Article
Authors
Molinero, David G.
Luo, Xi
Shen, Chao cc
Palego, Cristiano
Hwang, James
Goldsmith, Charles L.
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Material Science and Engineering Program
Materials Science and Engineering Program
Date
2013-03
Permanent link to this record
http://hdl.handle.net/10754/562677

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Abstract
This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.
Citation
Molinero, D., Luo, X., Shen, C., Palego, C., Hwang, J. C. M., & Goldsmith, C. L. (2013). Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches. IEEE Transactions on Device and Materials Reliability, 13(1), 310–315. doi:10.1109/tdmr.2013.2246567
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal
IEEE Transactions on Device and Materials Reliability
DOI
10.1109/TDMR.2013.2246567
Collections
Articles; Electrical and Computer Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division