Show simple item record

dc.contributor.authorRojas, Jhonathan Prieto
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-08-03T10:58:14Z
dc.date.available2015-08-03T10:58:14Z
dc.date.issued2013-01-07
dc.identifier.issn18626254
dc.identifier.doi10.1002/pssr.201206490
dc.identifier.urihttp://hdl.handle.net/10754/562609
dc.description.abstractCan we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry's most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipWe appreciate the generous baseline funding from KAUST. We also thank the support from the staffs in the KAUST Advanced Nanofabrication Facilities (KANF). We would like to thank Olga Kasimov for the graphic design presented on the back cover.
dc.publisherWiley
dc.subjectFlexible electronics
dc.subjectHigh-k materials
dc.subjectMetal gates
dc.subjectMOS capacitors
dc.subjectSilicon
dc.titleFlexible semi-transparent silicon (100) fabric with high-k/metal gate devices
dc.typeArticle
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalPhysica Status Solidi - Rapid Research Letters
kaust.personRojas, Jhonathan Prieto
kaust.personHussain, Muhammad Mustafa
dc.date.published-online2013-01-07
dc.date.published-print2013-03


This item appears in the following Collection(s)

Show simple item record