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dc.contributor.authorCheng, Yingchun
dc.contributor.authorYao, Kexin
dc.contributor.authorYang, Yang
dc.contributor.authorLi, Liang
dc.contributor.authorYao, Yingbang
dc.contributor.authorWang, Qingxiao
dc.contributor.authorZhang, Xixiang
dc.contributor.authorHan, Yu
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2015-08-03T10:41:29Z
dc.date.available2015-08-03T10:41:29Z
dc.date.issued2013
dc.identifier.citationCheng, Y., Yao, K., Yang, Y., Li, L., Yao, Y., Wang, Q., … Schwingenschlögl, U. (2013). Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition. RSC Advances, 3(38), 17287. doi:10.1039/c3ra42171f
dc.identifier.issn20462069
dc.identifier.doi10.1039/c3ra42171f
dc.identifier.urihttp://hdl.handle.net/10754/562528
dc.description.abstractRecently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.
dc.publisherRoyal Society of Chemistry (RSC)
dc.titleVan der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition
dc.typeArticle
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Center
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentChemical Science Program
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentCore Labs
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNanostructured Functional Materials (NFM) laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalRSC Advances
kaust.personCheng, Yingchun
kaust.personYao, Kexin
kaust.personYang, Yang
kaust.personLI, LIANG
kaust.personYao, Yingbang
kaust.personWang, Qingxiao
kaust.personZhang, Xixiang
kaust.personHan, Yu
kaust.personSchwingenschlögl, Udo


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