Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition
Type
ArticleAuthors
Cheng, Yingchun
Yao, Kexin
Yang, Yang
Li, Liang
Yao, Yingbang
Wang, Qingxiao
Zhang, Xixiang

Han, Yu

Schwingenschlögl, Udo

KAUST Department
Advanced Membranes and Porous Materials Research CenterAdvanced Nanofabrication, Imaging and Characterization Core Lab
Chemical Science Program
Computational Physics and Materials Science (CPMS)
Core Labs
Imaging and Characterization Core Lab
Material Science and Engineering Program
Nanostructured Functional Materials (NFM) laboratory
Physical Science and Engineering (PSE) Division
Date
2013Permanent link to this record
http://hdl.handle.net/10754/562528
Metadata
Show full item recordAbstract
Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.Citation
Cheng, Y., Yao, K., Yang, Y., Li, L., Yao, Y., Wang, Q., … Schwingenschlögl, U. (2013). Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition. RSC Advances, 3(38), 17287. doi:10.1039/c3ra42171fPublisher
Royal Society of Chemistry (RSC)Journal
RSC Advancesae974a485f413a2113503eed53cd6c53
10.1039/c3ra42171f