• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguideTheses and Dissertations LibguideSubmit an Item

    Statistics

    Display statistics

    Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Type
    Article
    Authors
    Cheng, Yingchun cc
    Yao, Kexin
    Yang, Yang
    Li, Liang
    Yao, Yingbang
    Wang, Qingxiao
    Zhang, Xixiang cc
    Han, Yu cc
    Schwingenschlögl, Udo cc
    KAUST Department
    Advanced Membranes and Porous Materials Research Center
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Chemical Science Program
    Computational Physics and Materials Science (CPMS)
    Core Labs
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Nanostructured Functional Materials (NFM) laboratory
    Physical Science and Engineering (PSE) Division
    Date
    2013
    Permanent link to this record
    http://hdl.handle.net/10754/562528
    
    Metadata
    Show full item record
    Abstract
    Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.
    Citation
    Cheng, Y., Yao, K., Yang, Y., Li, L., Yao, Y., Wang, Q., … Schwingenschlögl, U. (2013). Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition. RSC Advances, 3(38), 17287. doi:10.1039/c3ra42171f
    Publisher
    Royal Society of Chemistry (RSC)
    Journal
    RSC Advances
    DOI
    10.1039/c3ra42171f
    ae974a485f413a2113503eed53cd6c53
    10.1039/c3ra42171f
    Scopus Count
    Collections
    Articles; Advanced Membranes and Porous Materials Research Center; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Chemical Science Program; Material Science and Engineering Program; Computational Physics and Materials Science (CPMS)

    entitlement

     
    DSpace software copyright © 2002-2022  DuraSpace
    Quick Guide | Contact Us | KAUST University Library
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.