Show simple item record

dc.contributor.authorBarasheed, Abeer Z.
dc.contributor.authorSarath Kumar, S. R.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-08-03T10:40:59Z
dc.date.available2015-08-03T10:40:59Z
dc.date.issued2013
dc.identifier.issn20507534
dc.identifier.doi10.1039/c3tc30215f
dc.identifier.urihttp://hdl.handle.net/10754/562515
dc.description.abstractIn this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.
dc.publisherRoyal Society of Chemistry (RSC)
dc.titleTemperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Materials Chemistry C
kaust.personAlshareef, Husam N.
kaust.personBarasheed, Abeer Z.
kaust.personSarath Kumar, S. R.


This item appears in the following Collection(s)

Show simple item record