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    Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

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    Type
    Article
    Authors
    Barasheed, Abeer Z.
    Sarath Kumar, S. R.
    Alshareef, Husam N. cc
    KAUST Department
    Functional Nanomaterials and Devices Research Group
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2013
    Permanent link to this record
    http://hdl.handle.net/10754/562515
    
    Metadata
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    Abstract
    In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.
    Citation
    Barasheed, A. Z., Kumar, S. R. S., & Alshareef, H. N. (2013). Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films. Journal of Materials Chemistry C, 1(26), 4122. doi:10.1039/c3tc30215f
    Publisher
    Royal Society of Chemistry (RSC)
    Journal
    Journal of Materials Chemistry C
    DOI
    10.1039/c3tc30215f
    ae974a485f413a2113503eed53cd6c53
    10.1039/c3tc30215f
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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