Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films
Type
ArticleKAUST Department
Functional Nanomaterials and Devices Research GroupMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2013Permanent link to this record
http://hdl.handle.net/10754/562515
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In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.Citation
Barasheed, A. Z., Kumar, S. R. S., & Alshareef, H. N. (2013). Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films. Journal of Materials Chemistry C, 1(26), 4122. doi:10.1039/c3tc30215fPublisher
Royal Society of Chemistry (RSC)Journal
Journal of Materials Chemistry Cae974a485f413a2113503eed53cd6c53
10.1039/c3tc30215f