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dc.contributor.authorJiang, Jie
dc.contributor.authorWang, Xinghui
dc.contributor.authorZhang, Qing
dc.contributor.authorLi, Jingqi
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2015-08-03T10:40:05Z
dc.date.available2015-08-03T10:40:05Z
dc.date.issued2013
dc.identifier.citationJiang, J., Wang, X., Zhang, Q., Li, J., & Zhang, X. X. (2013). Thermal oxidation of Ni films for p-type thin-film transistors. Physical Chemistry Chemical Physics, 15(18), 6875. doi:10.1039/c3cp50197c
dc.identifier.issn14639076
dc.identifier.doi10.1039/c3cp50197c
dc.identifier.urihttp://hdl.handle.net/10754/562492
dc.description.abstractp-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.
dc.publisherRoyal Society of Chemistry (RSC)
dc.titleThermal oxidation of Ni films for p-type thin-film transistors
dc.typeArticle
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentCore Labs
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Chemistry Chemical Physics
dc.contributor.institutionNOVITAS, Nanoelectronics Centre of Excellence, Nanyang Technological University, Singapore 639798, Singapore
kaust.personLi, Jingqi
kaust.personZhang, Xixiang


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