Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature
Ndjawa, Guy Olivier Ngongang
Chou, Kang Wei
O'Regan, Brian C.
Anthopoulos, Thomas D.
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
KAUST Solar Center (KSC)
Materials Science and Engineering Program
Organic Electronics and Photovoltaics Group
Permanent link to this recordhttp://hdl.handle.net/10754/562491
MetadataShow full item record
AbstractThe optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.
PublisherRoyal Society of Chemistry (RSC)