Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature
Ngongang Ndjawa, Guy Olivier
Chou, Kang Wei
O'Regan, Brian C.
Anthopoulos, Thomas D.
KAUST DepartmentKAUST Solar Center (KSC)
Material Science and Engineering Program
Organic Electronics and Photovoltaics Group
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/562491
MetadataShow full item record
AbstractThe optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.
CitationPattanasattayavong, P., Ndjawa, G. O. N., Zhao, K., Chou, K. W., Yaacobi-Gross, N., O’Regan, B. C., … Anthopoulos, T. D. (2013). Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature. Chem. Commun., 49(39), 4154–4156. doi:10.1039/c2cc37065d
PublisherRoyal Society of Chemistry (RSC)