Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature

Type
Article
Authors
Pattanasattayavong, Pichaya cc
Ngongang Ndjawa, Guy Olivier cc
Zhao, Kui cc
Chou, Kang Wei
Yaacobi-Gross, Nir
O'Regan, Brian C.
Amassian, Aram cc
Anthopoulos, Thomas D. cc
KAUST Department
KAUST Solar Center (KSC)
Material Science and Engineering Program
Organic Electronics and Photovoltaics Group
Physical Science and Engineering (PSE) Division
Date
2013
Permanent link to this record
http://hdl.handle.net/10754/562491

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Abstract
The optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.
Citation
Pattanasattayavong, P., Ndjawa, G. O. N., Zhao, K., Chou, K. W., Yaacobi-Gross, N., O’Regan, B. C., … Anthopoulos, T. D. (2013). Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature. Chem. Commun., 49(39), 4154–4156. doi:10.1039/c2cc37065d
Publisher
Royal Society of Chemistry (RSC)
Journal
Chem. Commun.
DOI
10.1039/c2cc37065d
Collections
Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)