Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors
Type
ArticleAuthors
Li, JingqiCheng, Yingchun

Guo, Zaibing
Wang, Zhihong
Zhu, Zhiyong
Zhang, Qing

Chan-Park, Chanpark
Schwingenschlögl, Udo

Zhang, Xixiang

KAUST Department
Advanced Nanofabrication, Imaging and Characterization Core LabPhysical Sciences and Engineering (PSE) Division
Materials Science and Engineering Program
Core Labs
Computational Physics and Materials Science (CPMS)
Date
2013Permanent link to this record
http://hdl.handle.net/10754/562481
Metadata
Show full item recordAbstract
Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been experimentally demonstrated (J. Li et al., Carbon, 2012, 50, 4628-4632). The source and drain contact heights in vertical CNTFETs could be much higher than in flat CNTFETs if the fabrication process is not optimized. To understand the impact of contact height on transistor performance, we use a semi-classical method to calculate the characteristics of CNTFETs with different contact heights. The results show that the drain current decreases with increasing contact height and saturates at a value governed by the thickness of the oxide. The current reduction caused by the increased contact height becomes more significant when the gate oxide is thicker. The higher the drain voltage, the larger the current reduction. It becomes even worse when the band gap of the carbon nanotube is larger. The current can differ by a factor of more than five between the CNTEFTs with low and high contact heights when the oxide thickness is 50 nm. In addition, the influence of the contact height is limited by the channel length. The contact height plays a minor role when the channel length is less than 100 nm. © 2013 The Royal Society of Chemistry.Publisher
Royal Society of Chemistry (RSC)Journal
NanoscaleISSN
20403364PubMed ID
23412466ae974a485f413a2113503eed53cd6c53
10.1039/c3nr33263b
Scopus Count
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