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    Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors

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    Type
    Article
    Authors
    Li, Jingqi
    Cheng, Yingchun cc
    Guo, Zaibing
    Wang, Zhihong
    Zhu, Zhiyong
    Zhang, Qing cc
    Chan-Park, Chanpark
    Schwingenschlögl, Udo cc
    Zhang, Xixiang cc
    KAUST Department
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Computational Physics and Materials Science (CPMS)
    Core Labs
    Imaging and Characterization Core Lab
    KAUST Supercomputing Laboratory (KSL)
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Supercomputing, Computational Scientists
    Date
    2013
    Permanent link to this record
    http://hdl.handle.net/10754/562481
    
    Metadata
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    Abstract
    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been experimentally demonstrated (J. Li et al., Carbon, 2012, 50, 4628-4632). The source and drain contact heights in vertical CNTFETs could be much higher than in flat CNTFETs if the fabrication process is not optimized. To understand the impact of contact height on transistor performance, we use a semi-classical method to calculate the characteristics of CNTFETs with different contact heights. The results show that the drain current decreases with increasing contact height and saturates at a value governed by the thickness of the oxide. The current reduction caused by the increased contact height becomes more significant when the gate oxide is thicker. The higher the drain voltage, the larger the current reduction. It becomes even worse when the band gap of the carbon nanotube is larger. The current can differ by a factor of more than five between the CNTEFTs with low and high contact heights when the oxide thickness is 50 nm. In addition, the influence of the contact height is limited by the channel length. The contact height plays a minor role when the channel length is less than 100 nm. © 2013 The Royal Society of Chemistry.
    Citation
    Li, J., Cheng, Y., Guo, Z., Wang, Z., Zhu, Z., Zhang, Q., … Zhang, X. X. (2013). Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors. Nanoscale, 5(6), 2476. doi:10.1039/c3nr33263b
    Publisher
    Royal Society of Chemistry (RSC)
    Journal
    Nanoscale
    DOI
    10.1039/c3nr33263b
    PubMed ID
    23412466
    ae974a485f413a2113503eed53cd6c53
    10.1039/c3nr33263b
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; KAUST Supercomputing Laboratory (KSL); Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; Computational Physics and Materials Science (CPMS)

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