Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films
KAUST DepartmentImaging and Characterization Core Lab
Physical Sciences and Engineering (PSE) Division
Advanced Nanofabrication, Imaging and Characterization Core Lab
Materials Science and Engineering Program
Functional Nanomaterials and Devices Research Group
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AbstractAsymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar or bipolar poling with various applied electric fields. The effects of polarization relaxation and fatigue on the currents were also investigated. We found that the conduction currents and the associated rectifications were controlled by the amplitude and direction of the polarization. We clearly observed the linear dependence of the current on the polarization. It is suggested that the space-charge-limited conduction and the charge injection at the Schottky interface between the film and the electrodes dominate the current. The electrically controlled rectifying behaviour observed in this study may be useful in nonvolatile resistance memory devices or tunable diodes. © 2013 IOP Publishing Ltd.