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dc.contributor.authorPattanasattayavong, Pichaya
dc.contributor.authorYaacobi-Gross, Nir
dc.contributor.authorZhao, Kui
dc.contributor.authorNgongang Ndjawa, Guy Olivier
dc.contributor.authorLi, Jinhua
dc.contributor.authorYan, Feng
dc.contributor.authorO'Regan, Brian C.
dc.contributor.authorAmassian, Aram
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2015-08-03T10:39:25Z
dc.date.available2015-08-03T10:39:25Z
dc.date.issued2012-12-27
dc.identifier.citationPattanasattayavong, P., Yaacobi-Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., … Anthopoulos, T. D. (2012). Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature. Advanced Materials, 25(10), 1504–1509. doi:10.1002/adma.201202758
dc.identifier.issn09359648
dc.identifier.pmid23280854
dc.identifier.doi10.1002/adma.201202758
dc.identifier.urihttp://hdl.handle.net/10754/562471
dc.description.abstractThe wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipP.P. and T. D. A. are grateful to Cambridge Display Technology (CDT), the Anandamahidol Foundation, Thailand, Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/J001473/1 and European Research Council (ERC) AMPRO project no. 280221 for financial support.
dc.publisherWiley
dc.subjectcopper thiocyanate
dc.subjectsolution processing
dc.subjecttransparent transistors
dc.subjectwide-bandgap p-type semiconductors
dc.titleHole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Materials
dc.contributor.institutionCentre for Plastic Electronics, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
dc.contributor.institutionDepartment of Applied Physics, Materials Research Centre, Hong Kong Polytechnic University, Hong Kong, Hong Kong
dc.contributor.institutionCentre for Plastic Electronics, Department of Chemistry, Imperial College London, London SW7 2AZ, United Kingdom
kaust.personZhao, Kui
kaust.personAmassian, Aram
kaust.personNgongang Ndjawa, Guy Olivier
dc.date.published-online2012-12-27
dc.date.published-print2013-03-13


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