Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Abstract
The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Citation
Pattanasattayavong, P., Yaacobi-Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., … Anthopoulos, T. D. (2012). Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature. Advanced Materials, 25(10), 1504–1509. doi:10.1002/adma.201202758

Acknowledgements
P.P. and T. D. A. are grateful to Cambridge Display Technology (CDT), the Anandamahidol Foundation, Thailand, Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/J001473/1 and European Research Council (ERC) AMPRO project no. 280221 for financial support.

Publisher
Wiley

Journal
Advanced Materials

DOI
10.1002/adma.201202758

PubMed ID
23280854

Permanent link to this record