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dc.contributor.authorZhai, Yujia
dc.contributor.authorPalard, Marylene
dc.contributor.authorMathew, Leo
dc.contributor.authorHussain, Muhammad Mustafa
dc.contributor.authorWillson, Grant Grant
dc.contributor.authorTutuc, Emanuel
dc.contributor.authorBanerjee, Sanjay Kumar
dc.date.accessioned2015-08-03T10:37:41Z
dc.date.available2015-08-03T10:37:41Z
dc.date.issued2012-11-26
dc.identifier.issn18764029
dc.identifier.doi10.2174/1876402911204040333
dc.identifier.urihttp://hdl.handle.net/10754/562423
dc.description.abstractWe report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf
dc.publisherBentham Science Publishers Ltd.
dc.titleFabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays
dc.typeArticle
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalMicro and Nanosystems
dc.contributor.institutionMicroelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, United States
dc.contributor.institutionAstroWatt, Inc, 10100 Burnet Rd, Bldg. 160, Austin, TX 78758, United States
kaust.personHussain, Muhammad Mustafa


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